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BGB420, Aug. 2001
BGB 420
Active Biased Transistor
MMIC
W ir e le ss S i l ic o n D is c r e t e s
Never stop thinking.
Edition 2001-08-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
BGB420 Data sheet Revision History: Previous Version: Page 7 8 9
2001-08-10 2000-11-28
Subjects (major changes since last revision) S-Parameter table added Figure "Output Compression Point" added SPICE Model added
For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com
BGB420 Active Biased Transistor
BGB420
Features * For high gain low noise amplifiers * Ideal for wideband applications, cellular telephones, cordless telephones, SAT-TV and high frequency oscillators * Gma=17.5dB at 1.8GHz * Small SOT343 package * Current easy adjustable by an external resistor * Open collector output * Typical supply voltage: 1.4-3.3V * SIEGET(R)-25 technology
Bias,4 Bias
C,3
Description SIEGET(R)-25 NPN Transistor with integrated biasing for high gain low noise figure applications. IC can be controlled using IBias according to IC=10*IBias .
B,1
E,2
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BGB420
Data sheet
Package SOT343
Marking MBs
4
Chip T0514
2001-08-10
BGB420
Maximum Ratings Parameter Maximum collector-emitter voltage Maximum collector current Maximum bias current Maximum emitter-base voltage Maximum base current Total power dissipation, TS < 107C1) Junction temperature Operating temperature range Storage temperature range Thermal resistance: junction-soldering point Symbol VCE IC IBias VEB IB Ptot Tj TOP TSTG Rth JS Value 3.5 30 3 1.5 0.7 120 150 -40 ..+85 -65 ... +150 <270 Unit V mA mA V mA mW C C C K/W
Notes: For detailed symbol description refer to figure 1. 1) TS is measured on the emitter lead at the soldering point to the PCB
IBias Bias,4 Bias
IC C,3
VCE
B,1 VEB IB
E,2
Fig. 1: Symbol definition
Data sheet
5
2001-08-10
BGB420
ID
VD
RBias IBias Bias,4 Bias IC C,3
Bias-T
RF Out
B,1 RF In
N.C.
E,2
Bias-T
Fig. 2: Test Circuit for Electrical Characteristics and S-Parameter Electrical Characteristics at TA=25C (measured in test circuit specified in fig. 2, min./max. values verified by random sampling) Parameter Maximum available power gain VD=2V, Ic=20mA, f=1.8GHz Insertion power gain VD=2V, Ic=20mA Insertion loss VD=2V, Ic=0mA Noise figure (ZS=50) VD=2V, Ic=5mA f=0.9GHz f=1.8GHz f=0.9GHz f=1.8GHz f=0.9GHz f=1.8GHz Symbol GMA |S21|2 IL F50 min. 16.0 typ. 17.5 22 16 21 15 1.3 1.5 12 10 22 20 0.16 7 10 13 1.8 2.0 max. Unit dB dB dB dB
Output power at 1dB gain compression VD=2V, Ic=20mA, f=1.8GHz ZL=ZLOPT ZL=50 Output third order intercept point VD=2V, Ic=20mA, f=1.8GHz ZL/S=ZL/SOPT ZL/S=50 Collector-base capacitance VCB=2V, f=1MHz Current Ratio IC/IBias IBias=0.5mA, VD=3V
Data sheet 6
P-1dB
dBm
7
OIP3 CCB CR
dBm pF
17
2001-08-10
BGB420
S-Parameter VD=2V, IC=20mA (see Electrical Characteristics for conditions) Frequency S11 [GHz] Mag
0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 6.0 0.4412 0.4064 0.3261 0.2854 0.2615 0.2525 0.2505 0.2476 0.2533 0.2579 0.2584 0.2874 0.3505 0.4061 0.4450
S11 Ang
-24.8 -47.4 -81.6 -105.8 -124.2 -136.4 -148.9 -158.2 -167.1 -173.3 -178.7 157.6 139.0 125.9 117.1
S21 Mag
35.7070 31.7670 23.1980 17.2590 13.5050 10.9810 9.1940 7.8930 6.9070 6.1460 5.5300 3.6990 2.7770 2.1930 1.8050
S21 Ang
160.6 143.9 120.9 106.9 97.5 90.6 84.8 80.1 75.6 71.7 68.2 51.6 36.1 21.5 8.6
S12 Mag
0.0078 0.0157 0.0261 0.0351 0.0444 0.0537 0.0628 0.0720 0.0819 0.0915 0.1009 0.1495 0.1970 0.2392 0.2864
S12 Ang
83.5 77.5 70.9 69.4 68.9 68.2 67.3 65.9 64.6 62.9 61.4 51.7 40.4 29.4 18.9
S22 Mag
0.9225 0.8321 0.6380 0.5012 0.4100 0.3435 0.2946 0.2571 0.2228 0.1966 0.1751 0.0802 0.0366 0.0913 0.1340
S22 Ang
-14.1 -26.2 -41.4 -49.6 -54.2 -57.4 -60.2 -62.6 -64.2 -66.0 -66.3 -70.1 -178.8 126.7 99.8
Device Current I
D
= f(V , R
D
Bias
)
30
270
25
820
20
I D [mA]
1.5k
15
10
2.7k
4.7k
5
8.2k
0 0 0.5 1 1.5 2 2.5 3 3.5
VD [V]
Data sheet
7
2001-08-10
BGB420
Power Gain |S | , Gma, Gms=f(f) 21 V = 3V, I =20mA
D C
30
2
Power Gain Gma, Gms=f(I ) C V = 3V
D
35
25
30
0.3GHz
Gma/Gms
25
0.9GHz
|S21|2, Gma, Gms [dB]
20
Gma, Gms [dB]
20
15
1.9GHz
15
|S |2
21
2.5GHz
10
10
5
5
0 0 1 2 3 4 5 6
0 0 5 10 15 20 25 30 35
Frequency [GHz]
IC [mA]
Matching |S11|,|S22|=f(f) V = 3V, I =20mA
D C
0
Output Compression Point P = f(I ) -1dB C V = 3V, f = 1.8GHz, Z = 50
D
16
L
-5
14
S11
-10
12
|S11|, |S22| [dB]
10 -15
[dBm] P S
22
-1dB
8
-20
6 -25 4
-30
2
-35 0 1 2 3 4 5 6
0 0 5 10 15 20 25 30
Frequency [GHz]
IC [mA]
Data sheet
8
2001-08-10
BGB420
SPICE Model
BGB420-Chip
4 3
Q1 T502 T502 (area factor: 0.1) 2.7k 27k
R2 Q2
R1 Q1
Q2 R1 R2
2
1
Transistor Chip Data T502 (Berkley-SPICE 2G.6 Syntax)
.MODEL T502 NPN( + IS = 2.0045e-16 + IKF = 0.48731 + NR = 1.3325 + NC = 1.1724 + RE = 0.31111 + MJE = 0.46576 + ITF = 0.001 + MJC = 0.30232 + VJS = 0.75 + XTI = 3 BF = 72.534 ISE = 1.9049e-14 VAR = 19.705 RB = 8.5757 RC = 0.10105 TF = 6.7661e-12 PTF = 0 XCJC = 0.3 MJS = 0 FC = 0.73234) NF = 1.2432 NE = 2.0518 IKR = 0.69141 IRB = 0.00072983 CJE = 1.8063e-15 XTF = 0.42199 CJC = 2.3453e-13 TR = 2.3249e-09 XTB = 0 VAF = 28.383 BR = 7.8287 ISC = 1.9237e-17 RBM = 3.4849 VJE = 0.8051 VTF = 0.23794 VJC = 0.81969 CJS= 0 EG = 1.11
Package Equivalent Circuit
L2 Bias C1 C2
4
LBI LB0 LEI LEO LCI
0.36 0.4 0.3 0.15 0.36 0.4 0.6 0.4 95 6 132 28 88 8
nH nH nH nH nH nH nH nH fF fF fF fF fF fF
CCB
L1
C3
B
LBO
LBI
1
BGB420 Chip
2
3
LCI
LCO C
LCO L1 L2 CBE
CBE
LEI
CCE
CCB CCE C1 C2
LEO E
C3 Valid up to 3GHz
Data sheet
9
2001-08-10
BGB420
Typical Application
DC Bypass Voltage Supply
L VBias RBias
RF Out C
IBias
4
IC
3
Fig. 3: Typical application circuit. This proposal demonstrates how to use the BGB420 as a Self-Biased Transistor. As for a discrete Transistor matching circuits have to be applied. A good starting point for various applications are the Application Notes provided for the BFP420.
BGB420
1 C RF In 2
IC=10*IBias
Package Outline
0.9 0.1 0.20 3
M
2 0.2 1.3 0.1 4
B B
0.1 max A
1 0.3
+0.1
2 0.15 +0.1 -0.05 0.6
+0.1
0.20
M
A
GPS05605
Data sheet
10
1.25 0.1
2.10.1
+0.2 acc. to DIN 6784
2001-08-10

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